Breakdown voltage multiplying integration scheme

ABSTRACT

A circuit includes a first field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal; and a second field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal. The second field effect transistor and the first field effect transistor are of the same type, i.e., both re-channel transistors or both p-channel transistors. The second drain-source terminal of the first field effect transistor is coupled to the first drain-source terminal of the second field effect transistor; and the gate of the second field effect transistor is coupled to the first drain-source terminal of the second field effect transistor. The resulting three-terminal device can be substituted for a single field effect transistor that would otherwise suffer breakdown under proposed operating conditions.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a divisional of U.S. patent application Ser.No. 13/418,476 filed Mar. 13, 2012, entitled “BREAKDOWN VOLTAGEMULTIPLYING INTEGRATION SCHEME.” The complete disclosure of theaforementioned U.S. patent application Ser. No. 13/418,476 is expresslyincorporated herein by reference in its entirety for all purposes.

FIELD OF THE INVENTION

The present invention relates to the electrical and electronic arts,and, more particularly, to electronic circuitry and the like.

BACKGROUND OF THE INVENTION

For operation under large DC current loads, conventional voltagemultiplying circuits, such as the Cockcroft-Walton (CW) AC-to-DCconverter shown in FIG. 11, require large capacitance values that cannotbe implemented by solid-state devices unless impractically large deviceareas are used. The CW is made up of a voltage multiplier ladder networkof capacitors 1102, 1104, 1106, 1108 and diodes 1110, 1112, 1114, 1116to generate high voltages. The CW is attached to an AC input voltage1118. At the time when the AC input voltage 1118 reaches its negativepole the leftmost diode 1110 is allowing current to flow from the groundinto the first capacitor 1102, charging it up. When the same AC signalreverses polarity, current flows through the second diode 1112 chargingup the second capacitor with both the positive end from AC source andthe first capacitor, charging the second capacitor 1106 to twice thecharge held in the first. With each change in polarity of the input, thecapacitors add to the upstream charge and boost the voltage level of thecapacitors downstream, towards the output 1120.

As a result of the required large capacitor values, despite theavailability of high voltage diodes, it may not be practical toimplement these conventional voltage multiplying circuits as integratedcircuits. For example, assume 10 nF metal-insulator-metal capacitorsfabricated with 2 μm silicon dioxide dielectric layers having a largearea of 6 cm², allowing a breakdown voltage of 2.5 KV. Further, assumeGaN Schottky diodes with the same breakdown voltages of 2.5 KV. Undersuch assumptions, voltage multiplication from 2.5 KV (peak-to-peak) to 5KV (using a 2 stage multiplier) and 10 KV (using a 4 stage multiplier)is expected, under 75 KHz and 500 KHz operation, respectively. Althoughit is possible in principle to implement such a voltage multiplier as anintegrated circuit, the area consumed by the high voltage capacitors isimpractically large for typical applications.

SUMMARY OF THE INVENTION

Principles of the invention provide techniques for a breakdown voltagemultiplying integration scheme. In one aspect, an exemplary circuitincludes a first field effect transistor having a gate, a firstdrain-source terminal, and a second drain-source terminal. The firstfield effect transistor includes one of an n-channel transistor and ap-channel transistor. Also included is a second field effect transistorhaving a gate, a first drain-source terminal; it is of the same type(i.e., both n-channel transistors or both p-channel transistors). Thesecond drain-source terminal of the first field effect transistor iscoupled to the first drain-source terminal of the second field effecttransistor; and the gate of the second field effect transistor iscoupled to the first drain-source terminal of the second field effecttransistor.

In another aspect, another exemplary circuit includes a first fieldeffect transistor having a gate, a first drain-source terminal, and asecond drain-source terminal. The first field effect transistor includesone of an n-channel transistor and a p-channel transistor. Also includedis a second field effect transistor having a gate, a first drain-sourceterminal, and a second drain-source terminal; it is of the same type(i.e., both n-channel transistors or both p-channel transistors). Thesecond drain-source terminal of the first field effect transistor iscoupled to the first drain-source terminal of the second field effecttransistor; and the gate of the second field effect transistor iscoupled to the gate of the first field effect transistor.

In still another aspect, an exemplary method includes determining that asingle field effect transistor in a proposed circuit design will sufferbreakdown under proposed operating conditions. The single field effecttransistor has a gate connected to a first node in the proposed circuitdesign, a drain connected to a second node in the proposed circuitdesign, and a source connected to a third node in the proposed circuitdesign. Another step includes substituting for the single field effecttransistor an equivalent circuit, the equivalent circuit in turnincludes a first field effect transistor having a gate, a drain, and asource; and a second field effect transistor having a gate, a drain, anda source. The source of the first field effect transistor is coupled tothe drain of the second field effect transistor; the gate of the secondfield effect transistor is coupled to the drain of the second fieldeffect transistor; the drain of the first field effect transistor isconnected to the second node; the gate of the first field effecttransistor is connected to the first node; and the source of the secondfield effect transistor is connected to the third node.

In yet another aspect, an exemplary method includes determining that asingle field effect transistor in a proposed circuit design will sufferbreakdown under proposed operating conditions. The single field effecttransistor has a gate connected to a first node in the proposed circuitdesign, a drain connected to a second node in the proposed circuitdesign, and a source connected to a third node in the proposed circuitdesign. A further step includes substituting for the single field effecttransistor an equivalent circuit. The equivalent circuit in turnincludes a first field effect transistor having a gate, a drain, and asource; and a second field effect transistor having a gate, a drain, anda source. The source of the first field effect transistor is coupled tothe drain of the second field effect transistor; the gate of the secondfield effect transistor is coupled to the gate of the first field effecttransistor; the gates of the first and second field effect transistorsare coupled to the first node; the drain of the first field effecttransistor is coupled to the second node; and the source of the secondfield effect transistor is coupled to the third node.

Some aspects are directed to design structures for breakdown voltagemultiplying integration circuits as described herein.

As used herein, “facilitating” an action includes performing the action,making the action easier, helping to carry the action out, or causingthe action to be performed. Thus, by way of example and not limitation,instructions executing on one processor might facilitate an actioncarried out by instructions executing on a remote processor, by sendingappropriate data or commands to cause or aid the action to be performed.For the avoidance of doubt, where an actor facilitates an action byother than performing the action, the action is nevertheless performedby some entity or combination of entities.

Techniques of the present invention can provide substantial beneficialtechnical effects. For example, one or more embodiments may provide oneor more of the following advantages:

-   -   Providing a higher breakdown voltage than could be achieved by        an individual device    -   Providing a higher drive current than could be achieved by an        individual device    -   Providing a lower off current than could be achieved by an        individual device

These and other features and advantages of the present invention willbecome apparent from the following detailed description of illustrativeembodiments thereof, which is to be read in connection with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic illustration of a prior art GaN high electronmobility transistor;

FIG. 2 shows a schematic illustration of a high electron mobilitytransistor structure in accordance with a first exemplary embodiment;

FIG. 3 is a flow diagram showing an exemplary process for fabricatingthe high electron mobility transistor structure of FIG. 2;

FIG. 4 shows a schematic illustration of a high electron mobilitytransistor structure in accordance with a second exemplary embodiment;

FIG. 5 shows a schematic illustration of a Schottky diode structure inaccordance with a third exemplary embodiment;

FIG. 6 shows a schematic illustration of a Schottky diode structure inaccordance with a fourth exemplary embodiment;

FIGS. 7A and 7B show exemplary embodiments of Schottky diode structures;

FIG. 8 shows a further exemplary embodiment of a Schottky diodestructure;

FIG. 9 is a flow diagram showing an exemplary process for fabricating astructure useful for constructing a high electron mobility transferstructure or a Schottky diode structure,

FIG. 10 is a flow diagram showing a further exemplary process forfabricating a structure useful for constructing a high electron mobilitytransfer structure or a Schottky diode structure;

FIG. 11 is a Cockcroft-Walton (CW) AC-to-DC converter, according to theprior art;

FIGS. 12-16 are, respectively, first through fifth exemplaryvoltage-multiplying circuits, using n-channel devices, according toaspects of the invention;

FIG. 17 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test;

FIGS. 18-22 are, respectively, sixth through tenth exemplaryvoltage-multiplying circuits, analogous to those in FIGS. 12-16 butusing p-channel devices, according to aspects of the invention; and

FIGS. 23 and 24 are, respectively, eleventh and twelfth exemplaryvoltage-multiplying circuits, analogous to those in FIGS. 12 and 18 butusing both n- and p-channel devices, according to aspects of theinvention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

As noted above, for operation under large DC current loads, conventionalvoltage multiplying circuits, such as the CW AC-to-DC converter, requirelarge capacitance values that cannot be implemented by solid-statedevices unless very large device areas are used. For example, assume 10nF metal-insulator-metal capacitors fabricated with 2 μm silicondielectric layers having a large area of 6 cm², allowing a breakdownvoltage of 2.5 KV. Further, assume GaN Schottky diodes with the samebreakdown voltages of 2.5 KV. Under such assumptions, voltagemultiplication from 2.5 KV (peak-to-peak) to 5 KV (using a 2 stagemultiplier) and 10 KV (using a 4 stage multiplier) is expected, under 75KHz and 500 KHz operation, respectively. However, the capacitor area of6 cm² is very large and impractical for typical applications. Such largeareas are needed because a sufficiently thick dielectric material isneeded to sustain the high voltages, therefore limiting the value ofcapacitance per area that can be achieved. High-k dielectric materialscan be used to achieve higher capacitance per area and therefore allowlower capacitor areas. For example, a 10 nF metal-insulator-metalcapacitor can be fabricated with 2 μm thick HfO₂ dielectric and an areaof 1 cm². Although the reduction in the capacitor area with using high-kdielectrics is substantial, the capacitor area is still too large forsome applications.

With conventional devices, larger current loads (desired values areseveral amperes) would either require larger capacitors (which may notbe practical or very challenging with solid-state devices unlessimpractically large areas are used) or higher operation frequencies(which may not be practical or very challenging at such high operationvoltages). One or more embodiments advantageously provide circuitstructures that allow the multiplication of the device breakdown voltage(therefore allowing operation at higher voltages and currents), withoutrequiring high-frequency switching. These circuits can be fabricatedmonolithically using standard semiconductor fabrication technology.Examples of the covered device technology include but are not limited tohigh voltage Si, SiC and GaN metal-insulator-semiconductor (MIS)field-effect transistors, high-electron-mobility transistors (HEMT) orMIS-HEMT devices.

Prior to describing these circuit structures in detail, certain highelectron mobility transistor structures and Schottky diodes, which arenon-limiting examples of devices that can be used in these circuitstructures, will first be described.

High electron mobility transistors have been developed that generatehigh mobility electrons through the use of heterojunctions. Galliumnitride devices are useful for high power, high frequency switchingbecause of the high critical breakdown electric field and highsaturation velocity of carriers in gallium nitride (GaN), allowing forimproved device breakdown voltages without compromising the specificon-resistance of the device. The large bandgap of gallium nitride alsoallows for device operation at high temperatures.

The schematic structure of a GaN high electron mobility transistor(HEMT) is shown in FIG. 1. The transistor 20 includes a layer ofaluminum gallium nitride 22 adjoining a gallium nitride layer 24. Aconductive channel 26 formed by 2D electron gas (2DEG) is formed betweenthe source 28 and drain 30. The gate 32 adjoins the aluminum galliumnitride layer 22 in the illustrated transistor, though an insulatorlayer (not shown) may be provided beneath the gate 32 to form ametal-insulator-semiconductor (MIS) HEMT. The GaN layer is formed on asubstrate 36 of, for example, silicon, silicon carbide or sapphire. Anucleation layer 38 is provided between the gallium nitride layer 24 andthe substrate in the depicted transistor. The nucleation layer may beformed of a material such as gallium nitride, aluminum gallium nitrideor aluminum nitride. A passivation layer 39 is provided on thestructure. The passivation layer is formed of silicon nitride in theHEMT of FIG. 1. Despite the large bandgap of gallium nitride, thebreakdown voltages of GaN HEMT devices as discussed with respect to FIG.1 are limited to 2 KV due to the premature breakdown of GaN.

GaN-on-Si Schottky diodes have been developed and offer fast switchingas the reverse recovery charge is negligible. Such diodes may include aSi(111) substrate, a GaN layer, a buffer layer between the substrate andGaN layer, a passivation layer overlying the GaN layer, a guard ring,and a Schottky contact.

High electron mobility transistors are disclosed that are characterizedby high breakdown voltages. In exemplary embodiments, a gallium nitridesuperjunction is provided between the channel and the substrate,suppressing breakdown both through the substrate and between the gateand drain. Exemplary embodiments of Schottky diode structures includingdoped gallium nitride superjunction layers are also disclosed.

A first exemplary embodiment is shown in the schematic illustrationprovided in FIG. 2. The HEMT structure 40 shown in FIG. 2 includes abarrier layer of aluminum gallium nitride (AlGaN) 42 adjoining a galliumnitride superjunction layer 44 formed by p/n junctions 44′ in the GaN.More specifically, the entirety of the GaN material between the channeland the substrate 46 is a superjunction comprised of p/n junctions 44′that extend vertically with respect to the top surface of the substrateand the bottom surface of the barrier layer. In operation, the channelis formed inside the GaN layer close to the GaN/AlGaN interface. Due tothe two-dimensional quantum confinement of electrons in the channel, thechannel is typically referred to as two dimensional electron gas, or2DEG. The doped GaN p/n junctions 44′ extend vertically with respect tothe channel electric field. Current flows in both the p- and n-GaNparallel to each other when voltage is applied to the gate 50, alsoknown as the gate electrode. Channel conduction mode in the n- and p-GaNlayers is accumulation and inversion, respectively. The electric fieldset up by the GaN superjunction is vertical to the electric field set upbetween the gate and the drain, and also vertical to the electric fieldset up between the drain and the Si(111) substrate. As known from thetheory of superjunctions, the spatial distribution of an electric fieldvertical to that set up by the superjunction is modified in such a waythat the maximum value of the vertical electric field in the GaNmaterial is reduced. As a result, the breakdown voltage is increasedaccordingly. This applies to both the electric field set up between thegate and the drain and the electric field set up between the gate andthe Si(111) substrate.

The gate 50 adjoins the aluminum gallium nitride barrier layer 42,though a dielectric layer (not shown) may be provided beneath the gate50 to form a metal-insulator-semiconductor (MIS) HEMT structure. Thegate may optionally be recessed to further reduce the electric field onthe drain side of the gate (not shown). A field plate extends from thegate and extends over the barrier layer 42. Field-plates are widely usedin high voltage devices including GaN HEMTs to reduce the electric fieldon the drain side of the gate, and suppress premature breakdown betweenthe gate and the drain. Source and drain electrodes 52, 54 are alsoformed on the AlGaN barrier layer 42. A buffer layer 48 is formedbetween the substrate 46 and the GaN superjunction layer 44. The bufferlayer 48 in this illustrative embodiment is formed of aluminum nitride(AlN). It will be appreciated that both the barrier and buffer layerscan be formed of materials other than those identified above. Forexample, the barrier layer can be comprised of any suitable materialthat will grow on gallium nitride and provide a large band gap. Othermaterials which may be used as the barrier layer include but are notlimited to AlInN, AlGaInN, AlN/AlInN bilayer or superlattice. The bufferlayer can be any material that has a smaller lattice mismatch with thesubstrate material compared to that of GaN with the substrate material,and therefore reduces the built-in strain in GaN.

The substrate 46 in this exemplary embodiment is preferably comprised ofSi(111), although other substrate materials known to those of skill inthe art such as silicon carbide (SiC), sapphire or zinc oxide (ZnO)could alternatively be employed. A GaN substrate could alternatively beused, eliminating the need for any additional GaN growth. Si(111) is thepreferred substrate material because of its significantly lower cost andsuperior thermal conductivity. However, the growth of GaN on Si(111) ischallenging due the lattice mismatch between GaN and Si(111), and bufferlayers such as AlGaN or AlN are typically grown on Si(111) prior to GaNgrowth to reduce the lattice mismatch. The lattice mismatch between GaNand Si(111) results in mechanical strain in the GaN layer leading to thecreation of structural defects in GaN after a critical strain level isreached. The defects degrade the electrical properties of the GaN layersuch as carrier mobility and the critical electric field (and thereforethe inherent breakdown voltage of GaN). The accumulation of themechanical strain in GaN also results in the bowing of the substrate(and the layers grown on the substrate) and may lead to the cracking anddelamination of the layers. Since the accumulated strain is increased asthe thickness of the grown layers is increased, the thickness of the GaNchannel material is typically limited to less than ten (10) microns.Therefore, the GaN-on-Si HEMT devices are particularly prone tobreakdown through the Si substrate (i.e. breakdown between the drain andSi substrate, through the GaN channel material; hence, typically thethinner the GaN layer, the lower the breakdown voltage). Theimprovements disclosed herein are accordingly particularly relevant toGaN-on-Si devices which are most prone to breakdown though thesubstrate. Breakdown between gate and drain is in principle independentof the substrate type and is suppressed by employing a superjunctionstructure as disclosed herein, regardless of the type of the substratematerial being used.

A second AlGaN layer may be provided beneath the GaN layer 44 to form adouble heterojunction HEMT (DH-HEMT) in an alternative embodiment, inwhich case the layer 48 shown in FIG. 2 would actually comprise twolayers, specifically the AN buffer layer and the second AlGaN layer.Alternatively, an AlN/GaN supperlattice, an AlInN layer, an AlGaInNlayer, or an InGaN layer may be used instead of the second AlGaN layer.A passivation layer is optionally provided on the structure 40 andoverlies the barrier layer 42. The passivation layer is comprised ofsilicon nitride in this exemplary embodiment. The source 52 may overlapthe gate, running over the passivation layer to overlap the channel onthe drain side of the gate 50, to form a second field plate (not shown).The presence of the GaN superjunction layer 44 in the HEMT structureshown in FIG. 2 enhances the voltage sustaining level in the GaN beyondthe Poisson limit and improves the breakdown voltage of the structure40. The superjunction serves to suppress breakdown both through thesubstrate and between the gate and drain.

The embodiment of FIG. 2 is prepared by growing the buffer,superjunction and barrier layers on the substrate 46. Metal organicchemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and/orother techniques familiar to those of skill in the art may be employed.The superjunction can be formed by growing n-GaN, followed by maskedimplantation and/or diffusion to form the p-GaN layers. The n-typeconductivity of GaN may arise from the presence of defects such asvacancies or Si dopant atoms in GaN. An exemplary process flow is shownin FIG. 3.

Referring to step 1 in FIG. 3, the substrate 46 has an n-GaN layer 440,the optional buffer layer 48, and an implantation mask 430 formedthereon. In step 2, ions are implanted in the n-GaN layer 440. The ionsmay be, for example, magnesium or zinc. In step 3, the ions aredistributed within the n-GaN layer through processes known to those ofskill in the art, namely diffusion and/or activation anneal in theexemplary process. Activation anneal places dopant atoms on latticesites. Distribution of the dopant atoms is such that n-GaN regionsremain in the layer 440 beneath the implantation mask. The entirety ofthe thickness of the GaN material is a superjunction structure followingstep 3. The implantation mask 430 is removed in step 4, leaving astructure 450 comprising the substrate 46, optional buffer layer 48 andGaN superjunction layer 44. It will be appreciated that the vertical p/njunctions formed in this procedure are not entirely orthogonal to thebuffer layer 48 nor will they be orthogonal to the barrier layersubsequently formed thereon. Orthogonal junctions are not required. TheAlGaN barrier layer 42 can thereafter be grown on the structure 450 instep 5. It will be appreciated that fabrication process as describedabove can be conducted on a wafer scale.

A further exemplary embodiment of a HEMT structure 140 is shown in FIG.4. The structure shown in FIG. 4 includes a barrier layer of aluminumgallium nitride (AlGaN) 142 adjoining a doped gallium nitridesuperjunction layer 144 formed by p/n junctions 144′ in the GaN. Asdiscussed above with respect to the embodiment of FIG. 2, other largeband gap materials could be employed for the barrier layer. Similar tothe embodiment of FIG. 2, the entirety of the GaN material between theconductive channel and the substrate 146 is a superjunction. The dopedGaN p/n junctions 144′ extend vertically with respect to the channelelectric field. The junctions of the n- and p-regions may be oriented asshown in FIG. 3, which is considered vertical with respect to thiselement. Current flows in both the p- and n-GaN parallel to each otherwhen voltage is applied to the gate 150. The gate 150 adjoins thealuminum gallium nitride layer 142, though a dielectric layer (notshown) may be provided beneath the gate 150 to form ametal-insulator-semiconductor (MIS) HEMT structure. The gate mayoptionally be recessed (not shown). Source and drain electrodes 152, 154are also formed on the AlGaN barrier layer 142. A buffer layer 148 isoptionally formed between the substrate 146 and the GaN superjunctionlayer 144. The buffer layer 148 in this illustrative embodiment isformed of aluminum nitride (AlN). A passivation layer is optionallyprovided on the structure 140. The passivation layer is comprised ofsilicon nitride in this exemplary embodiment. The source 152 may overlapthe gate, running over the passivation layer to overlap the channel onthe drain side of the gate 150, to form a second field plate (notshown). In the embodiment of FIG. 4, the structure is detached from thesubstrate and bonded to an insulating or insulator-on-semiconductorsubstrate such as silicon-dioxide on Si. Such a substrate may be formedby various methods known in the art, such as thermal oxidation of the Sisubstrate followed by removal of the oxide from one side; deposition orgrowth of oxide or nitride on one side of the Si substrate; or using aSi on insulator (SOI) substrate in which a top thin Si layer has beenetched away. In the case of insulator on Si, the Si substrate can serveas a back gate, which may improve the electrostatics of the transistor,including the reduction of the off-current. This may be particularlyuseful in the case of DH-HEMT devices. Layer transfer may be achieved byspalling or other known techniques. U.S. Pub. No. 2010/0307572 discloseslayer transfer techniques applicable to fabrication of the structure140, and is incorporated by reference herein. The presence of the GaNsuperjunction layer 144 in the HEMT structure shown in FIG. 4 enhancesthe voltage sustaining level in the GaN beyond the Poisson limit andimproves the breakdown voltage of the structure 140. The superjunctionserves to suppress breakdown both through the substrate and between thegate and drain. The embodiment of FIG. 4 allows for even higherbreakdown voltages due to the insulating buried oxide (BOX) layer 158that helps prevent the permeation of the depletion region into thesubstrate that could otherwise result in premature breakdown through theSi substrate. This embodiment is also advantageous in that it allowsthinner GaN layers to be used compared to embodiment of FIG. 2, due tothe presence of the BOX layer. Growing thinner GaN layers on Si is lessdemanding since the accumulated strain due to lattice mismatch isincreased as the thickness of the GaN layer grown on Si is increased. Asin the embodiment of FIG. 2, the superjunction serves to suppressbreakdown both through the substrate and between the gate and drain, notjust between the gate and drain. Like the other embodiment disclosedherein, the embodiment of FIG. 4 can be formed as a doubleheterojunction HEMT.

The p-regions forming the superjunction in GaN may be doped byimpurities such as Mg and Zn. The doping levels of the p-regions mayrange from 5×10¹⁵ cm⁻³ to 5×10¹⁷ cm⁻³ but higher or lower doping levelsare also possible. The widths of the p-regions may range from 500 nm to5 μm but thinner or wider regions are also possible. The n-regionsforming the superjunction in GaN may be doped by impurities such as Sior result from the defects present in GaN. The doping levels of then-regions may range from 10¹⁵ cm⁻³ to 5×10¹⁶ cm⁻³ but higher or lowerdoping levels are also possible. The widths of the n-regions may rangefrom 500 nm to 3 μm but thinner or wider regions are also possible.

GaN superjunctions as formed in the manner disclosed in FIG. 3 can beemployed to form diode structures. The gate and drain electrodes of theembodiments of FIGS. 2 and 4 can, for example, be electrically connectedto function as diodes (not shown).

FIGS. 5 and 6 show schematic illustrations of Schottky diode structures200, 240 including doped gallium nitride superjunction layers. Referringfirst to FIG. 5, the exemplary structure includes a doped galliumnitride superjunction layer 204, a Si(111) substrate layer 206, and abuffer layer 208 therebetween. The buffer layer may comprise aluminumnitride. An ion-implanted guard ring 210 is provided in the GaN layer210 helps prevent damage to the Schottky junction. The implantation ofargon may be conducted in the fabrication of the structure 200 to createa high resistivity area. Implantation of other ions such as magnesium orzinc is an alternative approach. Argon, magnesium and zinc arenon-limiting examples. Those skilled in the art will appreciate thatguard rings are well known features of Schottky diodes. A passivationlayer 209 is formed on the GaN layer 204. A Schottky contact 250 adjoinsthe doped GaN superjunction layer 204, forming a Schottky barrier. Thedoped GaN superjunction layer 204 is similar to those employed in theHEMT structures described above with respect to FIGS. 2, 3 and 4. It iscomprised of a plurality of p- and n-regions having junctions thatextend vertically between the buffer layer 208 and the passivation layer209 or Schottky contact 250. The junctions may extend orthogonally tothe direction shown in FIG. 5. As discussed above with respect to FIG.3, the junctions are unlikely to be perpendicular with respect to thetop surface 206′ of the substrate layer or adjoining layers due to themanner in which they are formed. It will accordingly be appreciated thatthe schematic illustrations provided herein, such as FIG. 5, may not beto scale or show boundaries between elements in precise orientations.The superjunction layer 204 in this exemplary embodiment has a thicknessof less than ten microns, the entire thickness comprising asuperjunction structure. The substrate layer 206 in this exemplaryembodiment is Si(111), though other substrate materials known to thoseof skill in the art may be employed.

The Schottky diode structure 240 of FIG. 6 includes substrate,insulator, doped gallium nitride superjunction and passivation layers246, 258, 244 and 249, respectively, and an optional buffer layer 248.The doped gallium nitride superjunction layer is the same in structureas the layer 204 discussed above with respect to FIG. 5. The junctions244′ extend vertically with respect to the top surface 246′ of thesubstrate and the bottom surface of the passivation layer. The insulator258 may be a buried oxide (BOX) layer.

FIGS. 7A and 7B are schematic illustrations of similar Schottky diodestructures. The structure 200 shown in FIG. 7A is the same structure asshown in FIG. 5 though the junctions in the doped gallium nitridesuperjunction layer 204 are not visible in this view. Such junctionswould be visible in this view if they were formed orthogonally withrespect to the directions in which the junctions in this exemplaryembodiment are formed, and could resemble the vertical junctions formedin the GaN layer shown in FIG. 3. FIG. 7B shows a Schottky diodestructure 200′ having the same structure as the structure 200 shown inFIG. 7A except for the configuration of the Schottky contact 250′ andadjoining passivation layer.

FIG. 8 shows a Schottky diode structure 260 having elements in commonwith the structures shown in FIGS. 7A and 7B, the same reference numbersbeing used to designate such elements. The structure 260 furtherincludes an AlGaN layer or a GaN/AlN superlattice layer 212 between thebuffer layer 208 and the doped gallium nitride superjunction layer 204.

FIGS. 9 and 10 show schematic illustrations of exemplary processes thatmay be used entirely or in part to fabricate one or more of the HEMT ordiode structures disclosed herein, it being appreciated that otherprocesses could instead be employed. Referring to FIG. 9, a stressormetal layer 502 and a flexible handle substrate 504 are formed on aninitial substrate 506. The initial substrate may comprise, for example,gallium nitride or gallium nitride on sapphire or silicon carbide. Theflexible handle substrate 504 can be a flexible adhesive. The flexiblehandle substrate is used to cause tensile stress in the metal layer(e.g. nickel) to form a fracture 508 in the initial substrate 504. Twoelements remain following this procedure, one 510 comprising theflexible handle substrate, the stressor metal layer 502 and a thinspalled gallium nitride layer 512, the other 514 comprising theremaining portion of the initial substrate 506. If the initial substrateis gallium nitride, it can be reused by forming another stressor metallayer on it followed by formation of a flexible handle substrate. If theinitial substrate is gallium nitride on sapphire or silicon carbide, agallium nitride layer can again be grown on the remaining portion of theinitial substrate followed by deposition of the stressor metal layer andflexible handle substrate prior to reuse for the same procedure.

The element 510 including the thin spalled gallium nitride layer 512 isfurther processed to add, for example, an insulator layer 158 and asilicon substrate layer 146 such as those described with respect to theexemplary embodiment of FIG. 4. The flexible handle substrate 504 andstressor metal layer 502 are removed from this element 516 followed byfurther processing to form a superjunction layer if necessary and, usingthe example of FIG. 4, add the barrier layer, passivation layer, andelectrodes.

FIG. 10 shows a process similar to that shown in FIG. 9, but starts witha different initial structure 600 and is preferred. The initialstructure 600 includes a flexible handle substrate 504 and a stressormetal layer 502 formed on a gallium nitride layer 602. A buffer layer604 is positioned between the gallium nitride layer 602 and a siliconsubstrate 606 (e.g. Si(111)). As discussed above, aluminum nitride maybe employed as a buffer layer. A fracture 608 is formed in the siliconsubstrate 606, resulting in a first structure 612 including a thinspalled silicon layer 610 and the other layers 502, 504, 602, 604discussed above and the remaining portion 614 of the silicon substrate606. The spalled silicon and buffer layers 604, 610 can be removed toform a third structure 616 including the gallium nitride layer, stressormetal layer and flexible handle substrate. The third structure 616 canbe bonded to the oxide layer 158 to form a fourth structure 618 similarto the structure 516 shown in FIG. 9. The flexible handle substrate andstressor metal layer can be removed followed by further processing toobtain, for example, the structure shown in FIG. 4. The superjunctioncan be formed either before or after spalling. It is also possible toform the superjunction, grow the barrier layer, and then conduct thespalling procedure. The principles of the techniques shown in FIGS. 9and 10 can be applied to the fabrication of the Schottky diodestructures discussed above with respect to FIGS. 5-8.

The aforementioned exemplary voltage-multiplying circuits will now bedescribed in detail with respect to FIGS. 12-16. Circuit 1200 of FIG. 12includes transistor M1, numbered 1204, and transistor M2, numbered 1212.Note that transistor labels M1, M2, M3, M4, and M5; current symbols, andvoltage symbols are re-used in FIGS. 12-16 and are not necessarilyidentical in the different figures; unique reference characters areemployed as appropriate to avoid confusion. The two transistors 1204,1212 together form an effective three-terminal device that can besubstituted for a single transistor; the overall drain is the drain 1202of transistor 1204; the overall gate is the gate 1206 of transistor1204; and the overall source is the source 1210 of transistor 1212. Thesource of transistor 1204 is coupled to the drain of transistor 1212 at1208, and transistor 1212 is diode connected so that its gate is alsoconnected to node 1208. In circuit 1200 of FIG. 12, the gate voltageV_(G) is divided equally (assuming the same channel width to lengthratios (W/L for the two transistors) between the two transistors M1 andM2. (Note it is also assumed, by way of a non-limiting illustrativesimplification, that the two transistors have the same (or close)threshold voltages in order for the gate voltage to be divided equallyacross the two transistors. In an integrated circuit, typically all thetransistors have the same (or very close) threshold voltages). Ifcircuit 1200 is used as a diode-connected transistor, i.e. the overalldrain 1202 is connected to the overall gate 1206, dividing the gatevoltage equally between the two transistors M1 and M2 as described aboveallows an upper limit of a twofold increase in the breakdown voltage,while the drive current is unchanged for a given W/L.

Circuit 1300 of FIG. 13 includes transistor M1, numbered 1304, andtransistor M2, numbered 1312. The two transistors 1304, 1312 togetherform an effective three-terminal device that can be substituted for asingle transistor; the overall drain is the drain 1302 of transistor1304; the overall gate 1306 is connected to the gates of bothtransistors 1304, 1312; and the overall source is the source 1310 oftransistor 1312. The source of transistor 1304 is coupled to the drainof transistor 1312 at 1308. In circuit 1300 of FIG. 13, the loadtransistor 1304 is biased in the linear mode, while the drivertransistor 1312 is in saturation. The drain voltage of transistor 1312is thus reduced from V_(D) to V_(X), reducing the electric field on thedrain side of the gate and therefore reducing the off-current of thedevice while the on-current is not affected. In addition, breakdownbetween the gate and drain of the transistor 1312 is suppressed due tothe reduced voltage of node 1308. The W/L ratio of the load transistor1304 may be chosen large enough to allow sufficiently low accessresistance. Circuits 1200 and 1300 may be combined as in circuit 1400 ofFIG. 14, and may offer the advantages of both circuits 1200 and 1300.

Circuits 1500 of FIG. 15 and 1600 of FIG. 16 show solutions for doublingthe breakdown voltage in diode-connected configurations and alsodoubling the drive current (W/L ratios are again assumed the same forall transistors). Circuit 1600 offers a lower gate-drain voltage ontransistor M3, numbered 1635 (and thus a lower chance of breakdown andhigher reliability) at the cost of an extra diode-connected transistor,M4, numbered 1641.

Each of the circuits 1200, 1300, 1400, 1500, 1600 can be viewed as ablack-box with three terminals similar to that of an individualtransistor with three terminals. Therefore, embodiments of the inventioncontemplate the combination of these circuits such that one of thedisclosed circuits 1200, 1300, 1400, 1500, or 1600 is used instead of anindividual transistor component in the same circuit or in another one ofthe disclosed circuits 1200, 1300, 1400, 1500, or 1600.

By way of review and provision of additional detail, the breakdownvoltage of GaN HEMT devices is typically limited to 2 KV because ofpremature breakdown due to the gate-drain electric field. GaN-on-Sidevices also suffer from premature breakdown through the Si substrate.Higher breakdown voltages are desired for power electronics applications(for example, >10 KV within 10 years). One or more embodimentsadvantageously provide exemplary circuit structures to increase thebreakdown voltage of integrated devices formed from individual deviceswith lower breakdown voltages, without compromising drive current.Further, one or more instances provide such circuit structures in whichthe transistor devices are GaN-on-Si HEMT or MIS-HEMT devices; forexample, of the kinds described above. Yet further, one or moreembodiments are directed to a method of forming the exemplary(integrated) circuit structures to increase the breakdown voltage ofintegrated devices, wherein the integrated circuit is fabricated first,and then bonded onto an insulating substrates by controlled spalling asdescribed above.

One or more embodiments advantageously provide circuit structures whichpermit application of higher gate voltage and/or higher drain voltage onthe three-terminal device, as compared to a single transistor. If atransistor is to be used only as a switching device, high voltages arerequired on the drain but not on the gate. High gate voltages arerequired both on the drain and on the gate when the transistor is to beused as a diode where the gate is coupled to the drain. Circuits whichallow applying more voltage to the gate are therefore particularlyadvantageous in gated diode applications. For example, circuit 1300allows putting more voltage on the drain and therefore can be used as ahigh-voltage transistor; however, it does not address the gate voltage;it just improves the breakdown voltage of the transistor operating as atransistor. On the other hand, circuit 1200 allows applying more voltageon the gate and is therefore useful for diode-connected applications.Circuit 1400 allows use of higher voltage on both the gate and thedrain.

One or more embodiments are useful in high voltage transistorapplications. As used herein, a high voltage transistor includes siliconpower MOSFETs, power MOSFETs of other materials, high electron mobilitytransistors, and the like, operating at a drain voltage greater than orequal to 1 KV (and also for the gate voltage if diode-connected). One ormore circuits improve the breakdown voltage of the individualtransistors. Breakdown voltage is that voltage where the semiconductorfails as a dielectric.

Turning again to circuit 1200 of FIG. 12, transistor 1204 is biased atsaturation and is in series with diode-connected transistor 1212, whichhas to be in saturation because it is connected as a diode. Purely forpurposes of descriptive simplicity, assume both transistors aredimensionally identical, i.e., same width W and same length L. Sincethey are series connected, they have the same current I and thus thesame gate-source voltage V_(GS), which in turn implies that the gatevoltage of transistor 1212 is V_(G)/2 (assuming V_(S) is grounded, i.e.V_(S)=0). Therefore, both transistor 1204 and transistor 1212 arecarrying a voltage of V_(G)/2 instead of V_(G), effectively breaking inhalf the voltage that must be tolerated by each transistor. That is,viewing the circuit 1200 as a three-terminal device to be substitutedfor a single transistor, each actual transistor 1204, 1212 sees half theoverall voltage seen by the three-terminal circuit 1200. A variety oftransistors can be used for transistor 1204; one non-limiting example isthe above-mentioned superjunction GaN HEMT high electron mobilitytransistor. Similarly, a variety of transistors can be used fordiode-connected transistor 1212; one non-limiting example is theabove-described Schottky diode; another non-limiting example is theabove-mentioned superjunction GaN HEMT high electron mobility transistorwith the gate and drain connected; the latter approach is presentlypreferred.

Consider again circuit 1300 of FIG. 13. There are two transistors 1304,1312 which share a gate terminal 1306. The drain 1302 of transistor 1304is the “overall” drain of the three-terminal circuit, the source 1310 oftransistor 1312 is the “overall” source of the three-terminal circuit,and the coupled gates 1306 are the “overall” gate of the three-terminalcircuit. Because the two transistors 1304, 1312 are in series, they musthave the same current, I. From equations for modeling field effecttransistors, which equations are in themselves well known to the skilledartisan, it can be shown that the top transistor 1304 is in the linearmode (triode region) and the bottom transistor 1312 is in the saturationmode (see, e.g., Sedra and Smith, Microelectronic Circuits, ThirdEdition, Oxford University Press, New York, 1991, pages 298-317,expressly incorporated by reference herein for all purposes). With thetop transistor 1304 in the linear mode, there is a voltage V_(X) at node1308 between transistor 1304 and transistor 1312, which is lower thanthe (overall) drain voltage V_(D), but higher than the overall sourcevoltage V_(S). Transistor 1312 now has a lower gate-to-drain voltagebecause V_(X) is lower than V_(D). A variety of transistors can be usedfor both transistors 1304 and 1312; one non-limiting example is theabove-mentioned superjunction GaN HEMT high electron mobilitytransistor.

Circuit 1400 of FIG. 14 includes transistor M1, numbered 1421;transistor M2, numbered 1423; and transistor M3, numbered 1425. Thethree transistors 1421, 1423, 1425 together form an effectivethree-terminal device that can be substituted for a single transistor;the overall drain is the drain 1402 of transistor 1421; the overall gateis the gate 1406 common to transistors 1421, 1423; and the overallsource is the source 1410 of transistor 1425. The source of transistor1421 is coupled to the drain of transistor 1423 at 1429, and transistor1425 is diode connected so that its gate is connected to its drain andthe source of transistor 1423 at node 1427.

In circuit 1400 of FIG. 14, transistor 1312 of circuit 1300 is replacedwith circuit 1200. Transistors 1421, 1423, and 1425 are all in series sothe same current I flows in all three. The gate voltage divides in halfon the gate of transistor 1425 and V_(X) is present at node 1429 betweentransistors 1421 and 1423. A variety of transistors can be used for bothtransistors 1421 and 1423; one non-limiting example is theabove-mentioned superjunction GaN HEMT high electron mobilitytransistor. Similarly, a variety of transistors can be used fordiode-connected transistor 1425; one non-limiting example is theabove-described Schottky diode; another non-limiting example is theabove-mentioned superjunction GaN HEMT high electron mobility transistorwith the gate and drain connected; the latter approach is presentlypreferred.

Consider again circuit 1500 of FIG. 15. Circuit 1500 of FIG. 15 includestransistor M1, numbered 1531; transistor M2, numbered 1533; andtransistor M3, numbered 1535. The three transistors 1531, 1533, 1535together form an effective three-terminal device that can be substitutedfor a single transistor; the overall drain is the drain 1502 of bothtransistor 1531 and transistor 1535; the overall gate is the gate 1506of transistor 1531; and the overall source is the source 1510 oftransistors 1533 and 1535. The source of transistor 1531 is coupled tothe drain of transistor 1533 at 1539, and transistor 1533 is diodeconnected so that its gate 1537 is also connected to node 1539 (and alsoto the gate of transistor 1535).

Circuit 1500 is similar to circuit 1200 with transistor 1535 added inparallel. This allows toleration of twice as much overall current ascompared to circuit 1200; transistor 1535 is biased at the samegate-source voltage as transistor 1533. Again assume for simplicity thatthe transistors are dimensionally identical. All the transistors 1531,1533, and 1535 are in the saturation mode.

Consider again circuit 1600 of FIG. 16. Circuit 1600 of FIG. 16 includestransistor M1, numbered 1631; transistor M2, numbered 1633; transistorM3, numbered 1635; and transistor M4, numbered 1641. The fourtransistors 1631, 1633, 1635, 1641 together form an effectivethree-terminal device that can be substituted for a single transistor;the overall drain is the drain 1602 of both transistor 1631 andtransistor 1641; the overall gate is the gate 1606 of transistor 1631;and the overall source is the source 1610 of transistors 1633 and 1635.The source of transistor 1631 is coupled to the drain of transistor 1633at 1639, and transistor 1633 is diode connected so that its gate 1637 isalso connected to node 1639 (and also to the gate of transistor 1635).The source of transistor 1641 is connected to the drain of transistor1635 at node 1643.

Circuit 1600 of FIG. 16 is similar to circuit 1500 of FIG. 15, but addsadditional transistor 1641 so that transistor 1635 sees a lowerdrain-to-gate voltage. In circuit 1500, transistor 1535 sees adrain-to-gate voltage of V_(D)−V_(G)/2 (assuming V_(S) is grounded, i.e.V_(S)=0). In circuit 1600, transistor 1635 sees a drain to gate voltageof V_(D)−V_(G), which is lower, as compared to circuit 1500, by V_(G)/2(note that (V_(D)−V_(G)/2)−V_(G)/2=V_(D)−V_(G)).

Once again, with regard to circuits 1500 and 1600, a variety oftransistors can be used for the non-diode-connected transistors; onenon-limiting example is the above-mentioned superjunction GaN HEMT highelectron mobility transistor; also, once again, a variety of transistorscan be used for the diode-connected transistors; one non-limitingexample is the above-described Schottky diode; another non-limitingexample is the above-mentioned superjunction GaN HEMT high electronmobility transistor with the gate and drain connected; the latterapproach is presently preferred.

One or more embodiments are realized using HEMT and/or MOSFET devicesrather than bipolar junction transistors. Furthermore, one or moreembodiments do not require both enhancement and depletion type (or bothn-channel and p-channel) devices, but rather can be realized by only onetype of transistors (i.e., n- or p-channel).

Additional embodiments provide corresponding methods, including methodsof designing, operating, and fabricating.

Thus, FIGS. 12-16 are, respectively, first through fifth exemplaryvoltage-multiplying circuits, using n-channel devices, according toaspects of the invention. On the other hand, FIGS. 18-22 are,respectively, sixth through tenth exemplary voltage-multiplyingcircuits, analogous to those in FIGS. 12-16 but using p-channel devices,according to aspects of the invention. Elements in FIGS. 18-22 analogousto those in FIGS. 12-16 have received the same reference characters,incremented by six hundred. The structures are the same, but thepolarity of the power supply lines is reversed; i.e. in the case ofn-channel devices, V_(D)>V_(S), so if V_(S) is grounded, V_(D)>0, but inthe case of p-channel devices, V_(D)<V_(S), so if V_(S) is grounded,V_(D)<0. Also note than in the case of re-channel devices, V_(G)>0, butin the case of p-channel devices, V_(G)<0.

FIGS. 23 and 24 are, respectively, eleventh and twelfth exemplaryvoltage-multiplying circuits, analogous to those in FIGS. 12 and 18 butusing both n- and p-channel devices, according to aspects of theinvention. In this regard, although one or more embodiments are focusedon circuits including only n-channel or only p-channel devices, it willbe appreciated by those skilled in the art that the same functionintended by the disclosed circuits may be accomplished by circuitsincluding both types of transistors. However, from the integration pointof view, including two types of transistors increases the processcomplexity (in particular the number of steps required for devicefabrication) significantly and therefore circuits including only asingle transistor type are preferred. Nevertheless, circuits includingtwo types of transistors are also within the scope of this invention.For example, a diode connected transistor may have an opposite channeltype as that of the other transistors, as shown in FIGS. 23 and 24.Elements in FIG. 23 analogous to those in FIG. 12 have received the samereference character, incremented by eleven hundred, and elements in FIG.24 analogous to those in FIG. 18 have received the same referencecharacter, incremented by six hundred. Note, however, in this regardthat node 1208 in FIG. 12 and node 1808 in FIG. 18 represent the sourceof M1, drain of M2, and gate of M2, all coupled together. However, thediode-connected transistors in FIGS. 23 and 24 have their gates coupledto their sources, such that node 2308 in FIG. 23 and node 2408 in FIG.24 represent the source of M1 and drain of M2 coupled together.

Attention should again be given to FIG. 12. Given the discussion thusfar, it will be appreciated that, in general terms, an exemplarycircuit, according to an aspect of the invention, includes a first fieldeffect transistor 1204 having a gate 1206, a first drain-source terminal1202, and a second drain-source terminal 1208. The first field effecttransistor is an n-channel transistor or a p-channel transistor. Alsoincluded is a second field effect transistor 1212 having a gate 1208, afirst drain-source terminal 1208, and a second drain-source terminal1210. The second field effect transistor is of the same type as thefirst, i.e., p-channel if the first is p-channel and n-channel if thefirst is n-channel. The second drain-source terminal 1208 of the firstfield effect transistor is coupled to the first drain-source terminal1208 of the second field effect transistor (these two terminals and thegate of transistor 1212 are all referred to as reference character 1208since they are interconnected at that node). The gate of the secondfield effect transistor is coupled to the first drain-source terminal ofthe second field effect transistor at 1208, as noted.

Optionally, the width of the first and second transistors is identicaland the length of the first and second transistors is identical.

In some instances, such as the example shown in FIG. 12, bothtransistors are re-channel.

In one or more embodiments, the first drain-source terminal 1202 of thefirst transistor 1204 is a drain terminal, the second drain-sourceterminal of the first transistor 1204 is a source terminal, the firstdrain-source terminal of the second transistor 1212 is a drain terminal,and the second drain-source terminal 1210 of the second transistor 1212is a source terminal.

As noted, in some cases, both transistors are high electron mobilitytransistor structures as described above.

In one or more embodiments, all the devices share the same barrier layermaterial, GaN material, buffer material(s) (if present), and substrate.These layers are grown first, and then patterned into individual devicesby isolation etch, i.e. by etching the barrier layer and the GaN layer,and optionally the buffer layer, in between the defined device areas,using known lithography and etching techniques. Typically, the gate,source and drain terminals are formed after device isolation, but thisorder may be reversed. After the device isolation, and source, drain andgate formation, a passivation layer is formed on top of the fabricateddevices (which are isolated from each other). Contact vias are opened inthe passivation layer to access the source, gate and drain terminals ofthe devices as necessary followed by metal deposition and patterning toform metal interconnect lines between devices and implement the desiredcircuits. Depending on the circuit complexity and/or layout, additionalpassivation/metallization levels may be necessary as known in the art.Note, however, that the circuits and/or structures disclosed herein arenot restricted to integrated circuit (IC) implementations, althoughimplementation as ICs is preferred.

Thus, in some cases, the first field effect transistor is a first highelectron mobility transistor structure, which in turn includes a firstdoped gallium nitride superjunction layer 44 or 144 having a firstplurality of p/n junctions. A first barrier layer adjoins the firstdoped gallium nitride superjunction layer, and the doped gallium nitridesuperjunction layer is positioned between a substrate layer 46 or 146and the barrier layer 42 or 142. Also included are a first sourceelectrode 52 or 152, comprising the source terminal of the first fieldeffect transistor; a first drain electrode 54 or 154, comprising thedrain terminal of the first field effect transistor; and a first gateelectrode 50 or 150, comprising the gate of the first field effecttransistor. A first passivation layer overlies the first barrier layer(not shown). An electric field set up by the first doped gallium nitridesuperjunction layer is vertical to an electric field set up between thefirst gate electrode and the first drain electrode upon application of avoltage to the first gate electrode.

Similarly, the second field effect transistor is a second high electronmobility transistor structure, which in turn includes a second dopedgallium nitride superjunction layer 44 or 144 having a second pluralityof p/n junctions. A second barrier layer adjoins the second dopedgallium nitride superjunction layer, and the doped gallium nitridesuperjunction layer is positioned between a substrate layer 46 or 146and the barrier layer 42 or 142. Note throughout that notations such as“first” and “second” are used for convenience to distinguish portions ofthe transistors but as noted above, in IC implementations, may simplyrefer to different portions of shared barrier layer material, shared GaNmaterial, shared buffer material(s) (if present), and shared substrate.Also included are a second source electrode 52 or 152, comprising thesource terminal of the second field effect transistor; a second drainelectrode 54 or 154, comprising the drain terminal of the second fieldeffect transistor; and a second gate electrode 50 or 150, comprising thegate of the second field effect transistor. A second passivation layeroverlies the second barrier layer. An electric field set up by thesecond doped gallium nitride superjunction layer is vertical to anelectric field set up between the second gate electrode and the seconddrain electrode upon application of a voltage to the second gateelectrode.

Furthermore, in some cases, the first field effect transistor is a firsthigh electron mobility transistor structure, which in turn includes afirst doped gallium nitride superjunction layer having a thickness ofless than ten microns and including a first plurality of p/n junctions.The entirety of the thickness of the first doped gallium nitridesuperjunction layer comprises a first superjunction structure such asshown in FIGS. 2 and 4. A first aluminum gallium nitride barrier layeradjoins the first doped gallium nitride superjunction layer, and thefirst doped gallium nitride superjunction layer is positioned between afirst silicon substrate layer and the barrier layer. Also included are afirst source electrode, comprising the source terminal of the firstfield effect transistor; a first drain electrode, comprising the drainterminal of the first field effect transistor; and a first gateelectrode, comprising the gate of the first field effect transistor. Thefirst doped gallium nitride superjunction layer is operable to suppressbreakdown both through the first silicon substrate layer and between thefirst gate and first drain electrodes.

Similarly, the second field effect transistor is a second high electronmobility transistor structure, which in turn includes a second dopedgallium nitride superjunction layer having a thickness of less than tenmicrons and including a second plurality of p/n junctions. The entiretyof the thickness of the second doped gallium nitride superjunction layercomprises a second superjunction structure such as shown in FIGS. 2 and4. A second aluminum gallium nitride barrier layer adjoins the seconddoped gallium nitride superjunction layer, and the second doped galliumnitride superjunction layer is positioned between a second siliconsubstrate layer and the barrier layer. Also included are a second sourceelectrode, comprising the source terminal of the second field effecttransistor; a second drain electrode, comprising the drain terminal ofthe second field effect transistor; and a second gate electrode,comprising the gate of the second field effect transistor. The seconddoped gallium nitride superjunction layer is operable to suppressbreakdown both through the second silicon substrate layer and betweenthe second gate and second drain electrodes.

As noted, diode-connected transistors herein, such as transistor 1212 inFIG. 12, can instead be realized as the above-described Schottky diodestructures, such as those shown in FIGS. 5-8. Such a diode structure inturn includes a Schottky contact 250, 250′, a substrate 206, 246 havinga top surface 206′, 246′, and a doped gallium nitride superjunctionlayer 204, 244 between the Schottky contact and the top surface of thesubstrate. The doped gallium nitride superjunction layer has a thicknessof less than ten microns and comprises a plurality of p/n junctions(e.g. 244′). The entirety of the thickness of the doped gallium nitridesuperjunction layer 204, 244 comprises a superjunction structure. Thep/n junctions extending vertically with respect to the top surface ofthe substrate as illustrated in FIGS. 5 and 6. As shown in FIG. 6, aninsulating layer 258 may be provided between the substrate andsuperjunction layers.

In an integrated circuit, the substrate, buffer layer (e.g. AN) ifpresent, the second barrier layer (e.g. AlGaN) if present, and the GaNsuperjunction layers are shared by the Schottky diodes and HEMT devices,but the first (top) barrier layer (e.g. AlGaN) is present only in theHEMT devices and therefore needs to be removed from the areas wherediodes are fabricated, after growth. Passivation and metallizationprocesses/layers are the same for both diodes and transistors. Again,note that the circuits and/or structures disclosed herein are notrestricted to ICs (although implementation as ICs is preferred).

Referring now to FIG. 14, in some instances, the circuit furtherincludes a third field effect transistor 1421 having a gate, a firstdrain-source terminal 1402 and a second drain-source terminal 1429. Thethird field effect transistor is of the same type (p- or re-channel) asthe other two. The second drain-source terminal 1429 of the third fieldeffect transistor is coupled to the first drain-source terminal of thefirst field effect transistor 1423. The gate of the third field effecttransistor is coupled to the gate of the first field effect transistor1406. Note, with respect to FIG. 14, M2 is the “first” transistor, M3 isthe “second” transistor, and M1 is the “third” transistor.

Referring now to FIG. 15, in some instances, the circuit furtherincludes a third field effect transistor 1535 having a gate, a firstdrain-source terminal, and a second drain-source terminal. The thirdfield effect transistor is of the same type (i.e., n- or p-channel) asthe other two. The second drain-source terminal of the third fieldeffect transistor is coupled to the second drain-source terminal of thesecond field effect transistor, at 1510. The gate of the third fieldeffect transistor is coupled to the gate of the second field effecttransistor, at 1537. The first drain-source terminal of the first fieldeffect transistor is coupled to the first drain-source terminal of thethird field effect transistor, at 1502.

Referring now to FIG. 16, in some instances, the circuit furtherincludes third and fourth field effect transistors, both of the sametype (i.e., n- or p-channel) as the other two. The third field effecttransistor 1635 has a gate, a first drain-source terminal, and a seconddrain-source terminal. The fourth field effect transistor 1641 has agate, a first drain-source terminal, and a second drain-source terminal.The second drain-source terminal of the third field effect transistor iscoupled to the second drain-source terminal of the second field effecttransistor at 1610. The gate of the third field effect transistor iscoupled to the gate of the second field effect transistor at 1637. Thefirst drain-source terminal of the first field effect transistor iscoupled to the first drain-source terminal of the fourth field effecttransistor, at 1602. The gate of the fourth field effect transistor iscoupled to the first drain-source terminal of the fourth field effecttransistor (i.e. transistor 1641 is diode-connected). The seconddrain-source terminal of the fourth field effect transistor is coupledto the first drain-source terminal of the third field effect transistor,at 1643.

Attention should again be given to FIG. 13. Given the discussion thusfar, it will be appreciated that, in general terms, another exemplarycircuit, according to another aspect of the invention, includes a firstfield effect transistor 1304 having a gate, a first drain-sourceterminal, and a second drain-source terminal. Also included is a secondfield effect transistor 1312 having a gate, a first drain-sourceterminal, and a second drain-source terminal. Both transistors are ofthe same type (i.e. n- or p-channel). The second drain-source terminalof the first field effect transistor is coupled to the firstdrain-source terminal of the second field effect transistor at 1308. Thegate of the second field effect transistor is coupled to the gate of thefirst field effect transistor at 1306.

Optionally, the width of the first and second transistors is identicaland the length of the first and second transistors is identical.

In some instances, such as the example shown in FIG. 13, bothtransistors are re-channel.

In one or more embodiments, the first drain-source terminal 1302 of thefirst transistor 1304 is a drain terminal, the second drain-sourceterminal of the first transistor 1304 is a source terminal, the firstdrain-source terminal of the second transistor 1312 is a drain terminal,and the second drain-source terminal 1310 of the second transistor 1312is a source terminal.

The first and second field effect transistors can be realized, forexample, as first and second high electron mobility transistorstructures of any of the kinds described above.

In another aspect, an exemplary method includes determining that asingle field effect transistor in a proposed circuit design will sufferbreakdown under proposed operating conditions. The single field effecttransistor has a gate connected to a first node in the proposed circuitdesign, a drain connected to a second node in the proposed circuitdesign, and a source connected to a third node in the proposed circuitdesign. An additional step includes substituting for the single fieldeffect transistor an equivalent circuit of any of the kinds describedherein (taking note that in some instances, diode-connected transistorsmay be of a different channel type than the other transistors in acircuit; see, e.g., FIGS. 23 and 24), with the “overall” gate, drain,and source of the equivalent circuit respectively connected to thefirst, second, and third nodes in the proposed circuit design.

Additional steps can include:

-   -   fabricating the proposed circuit design with the equivalent        circuit substituted for the single field effect transistor;    -   encoding, in a non-transitory manner, in a tangible,        computer-readable recordable storage medium, a design structure        corresponding to the proposed circuit design with the equivalent        circuit substituted for the single field effect transistor;        and/or    -   operating a physical circuit corresponding to the proposed        circuit design with the equivalent circuit substituted for the        single field effect transistor.

All of the methods can be carried out, for example, so that theeffective breakdown voltage is increased.

One or more exemplary methods as described herein can be used in thefabrication of integrated circuit chips. The resulting integratedcircuit chips can be distributed by the fabricator in raw wafer form(that is, as a single wafer that has multiple unpackaged chips), as abare die, or in a packaged form. In the latter case the chip is mountedin a single chip package (such as a plastic carrier, with leads that areaffixed to a motherboard or other higher level carrier) or in amultichip package (such as a ceramic carrier that has either or bothsurface interconnections or buried interconnections). In any case thechip is then integrated with other chips, discrete circuit elements,and/or other signal processing devices as part of either (a) anintermediate product, such as a motherboard, or (b) an end product. Theend product can be any product that includes integrated circuit chips,ranging from toys and other low-end applications to advanced computerproducts having a display, a keyboard or other input device, and acentral processor.

FIG. 17 shows a block diagram of an exemplary design flow 700 used forexample, in semiconductor IC logic design, simulation, test, layout, andmanufacture. Design flow 700 includes processes, machines and/ormechanisms for processing design structures or devices to generatelogically or otherwise functionally equivalent representations of thedesign structures and/or devices described above and shown in FIGS.12-16 and 18-24. The design structures processed and/or generated bydesign flow 700 may be encoded on machine-readable transmission orstorage media to include data and/or instructions that when executed orotherwise processed on a data processing system generate a logically,structurally, mechanically, or otherwise functionally equivalentrepresentation of hardware components, circuits, devices, or systems.Machines include, but are not limited to, any machine used in an ICdesign process, such as designing, manufacturing, or simulating acircuit, component, device, or system. For example, machines mayinclude: lithography machines, machines and/or equipment for generatingmasks (e.g. e-beam writers), computers or equipment for simulatingdesign structures, any apparatus used in the manufacturing or testprocess, or any machines for programming functionally equivalentrepresentations of the design structures into any medium (e.g. a machinefor programming a programmable gate array).

Design flow 700 may vary depending on the type of representation beingdesigned. For example, a design flow 700 for building an applicationspecific IC (ASIC) may differ from a design flow 700 for designing astandard component or from a design flow 700 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 17 illustrates multiple such design structures including an inputdesign structure 720 that is preferably processed by a design process710. Design structure 720 may be a logical simulation design structuregenerated and processed by design process 710 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 720 may also or alternatively comprise data and/or programinstructions that when processed by design process 710, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 720 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, design structure 720 may beaccessed and processed by one or more hardware and/or software moduleswithin design process 710 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIGS. 12-16 and18-24. As such, design structure 720 may comprise files or other datastructures including human and/or machine-readable source code, compiledstructures, and computer-executable code structures that when processedby a design or simulation data processing system, functionally simulateor otherwise represent circuits or other levels of hardware logicdesign. Such data structures may include hardware-description language(HDL) design entities or other data structures conforming to and/orcompatible with lower-level HDL design languages such as Verilog andVHDL, and/or higher level design languages such as C or C++.

Design process 710 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIGS. 12-16 and 18-24 to generatea Netlist 780 which may contain design structures such as designstructure 720. Netlist 780 may comprise, for example, compiled orotherwise processed data structures representing a list of wires,discrete components, logic gates, control circuits, I/O devices, models,etc. that describes the connections to other elements and circuits in anintegrated circuit design. Netlist 780 may be synthesized using aniterative process in which netlist 780 is resynthesized one or moretimes depending on design specifications and parameters for the device.As with other design structure types described herein, netlist 780 maybe recorded on a machine-readable data storage medium or programmed intoa programmable gate array. The medium may be a non-volatile storagemedium such as a magnetic or optical disk drive, a programmable gatearray, a compact flash, or other flash memory. Additionally, or in thealternative, the medium may be a system or cache memory, buffer space,or electrically or optically conductive devices and materials on whichdata packets may be transmitted and intermediately stored via theInternet, or other networking suitable means.

Design process 710 may include hardware and software modules forprocessing a variety of input data structure types including Netlist780. Such data structure types may reside, for example, within libraryelements 730 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 740, characterization data 750, verification data 760,design rules 770, and test data files 785 which may include input testpatterns, output test results, and other testing information. Designprocess 710 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 710 withoutdeviating from the scope and spirit of the invention. Design process 710may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 710 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 720 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 790.Design structure 790 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g. information stored in an IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to designstructure 720, design structure 790 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIGS. 12-16. In one embodiment, design structure 790may comprise a compiled, executable HDL simulation model thatfunctionally simulates the devices shown in FIGS. 12-16 and 18-24.

Design structure 790 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 790 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIGS. 12-16 and 18-24. Designstructure 790 may then proceed to a stage 795 where, for example, designstructure 790: proceeds to tape-out, is released to manufacturing, isreleased to a mask house, is sent to another design house, is sent backto the customer, etc.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

What is claimed is:
 1. A circuit comprising: a first field effecttransistor having a gate, a first drain-source terminal, and a seconddrain-source terminal, said first field effect transistor comprising oneof an n-channel transistor and a p-channel transistor; and a secondfield effect transistor having a gate, a first drain-source terminal,and a second drain-source terminal, said second field effect transistoralso comprising said one of an n-channel transistor and a p-channeltransistor; wherein: said second drain-source terminal of said firstfield effect transistor is coupled to said first drain-source terminalof said second field effect transistor; and said gate of said secondfield effect transistor is coupled to said first drain-source terminalof said second field effect transistor; further comprising: a thirdfield effect transistor having a gate, a first drain-source terminal,and a second drain-source terminal, said third field effect transistorcomprising said one of an n-channel transistor and a p-channeltransistor; a fourth field effect transistor having a gate, a firstdrain-source terminal, and a second drain-source terminal, said fourthfield effect transistor comprising said one of an n-channel transistorand a p-channel transistor; wherein: said second drain-source terminalof said third field effect transistor is coupled to said firstdrain-source terminal of said first field effect transistor; said gateof said fourth field effect transistor is coupled to said firstdrain-source terminal of said fourth field effect transistor; saidsecond drain-source terminal of said fourth field effect transistor iscoupled to said first drain-source terminal of said third field effecttransistor; said first drain-source terminal of said fourth field effecttransistor is coupled to said first drain-source terminal of said firstfield effect transistor; and said gate of said third field effecttransistor is coupled to said gate of said second field effecttransistor.
 2. The circuit of claim 1, wherein: said first field effecttransistor comprises a first high electron mobility transistorstructure, in turn comprising: a first doped gallium nitridesuperjunction layer comprising a first plurality of p/n junctions; afirst substrate layer; a first barrier layer adjoining said first dopedgallium nitride superjunction layer, said first doped gallium nitridesuperjunction layer being positioned between said first substrate layerand said first barrier layer; a first source electrode, comprising saidsource terminal of said first field effect transistor; a first drainelectrode, comprising said drain terminal of said first field effecttransistor; a first gate electrode, comprising said gate of said firstfield effect transistor; and a first passivation layer overlying saidfirst barrier layer, wherein an electric field set up by said firstdoped gallium nitride superjunction layer is vertical to an electricfield set up between said first gate electrode and said first drainelectrode upon application of a voltage to said first gate electrode;and said second field effect transistor comprises a second high electronmobility transistor structure, in turn comprising: a second dopedgallium nitride superjunction layer comprising a second plurality of p/njunctions; a second substrate layer; a second barrier layer adjoiningsaid second doped gallium nitride superjunction layer, said second dopedgallium nitride superjunction layer being positioned between said secondsubstrate layer and said second barrier layer; a second sourceelectrode, comprising said source terminal of said second field effecttransistor; a second drain electrode, comprising said drain terminal ofsaid second field effect transistor; a second gate electrode, comprisingsaid gate of said second field effect transistor; and a secondpassivation layer overlying said second barrier layer, wherein anelectric field set up by said second doped gallium nitride superjunctionlayer is vertical to an electric field set up between said second gateelectrode and said second drain electrode upon application of a voltageto said second gate electrode.
 3. The circuit of claim 1, wherein: saidfirst field effect transistor comprises a first high electron mobilitytransistor structure, in turn comprising: a first doped gallium nitridesuperjunction layer having a thickness of less than ten microns andcomprising a first plurality of p/n junctions, the entirety of thethickness of said first doped gallium nitride superjunction layercomprising a first superjunction structure; a first silicon substratelayer; a first aluminum gallium nitride barrier layer adjoining saidfirst doped gallium nitride superjunction layer, said first dopedgallium nitride superjunction layer being positioned between said firstsilicon substrate layer and said first aluminum gallium nitride barrierlayer; a first source electrode, comprising said source terminal of saidfirst field effect transistor; a first drain electrode, comprising saiddrain terminal of said first field effect transistor; a first gateelectrode, comprising said gate of said first field effect transistor,said first doped gallium nitride superjunction layer being operable tosuppress breakdown both through said first silicon substrate layer andbetween said first gate and first drain electrodes; and said secondfield effect transistor comprises a second high electron mobilitytransistor structure, in turn comprising: a second doped gallium nitridesuperjunction layer having a thickness of less than ten microns andcomprising a second plurality of p/n junctions, the entirety of thethickness of said second doped gallium nitride superjunction layercomprising a second superjunction structure; a second silicon substratelayer; a second aluminum gallium nitride barrier layer adjoining saidsecond doped gallium nitride superjunction layer, said second dopedgallium nitride superjunction layer being positioned between said secondsubstrate layer and said second aluminum gallium nitride barrier layer;a second source electrode, comprising said source terminal of saidsecond field effect transistor; a second drain electrode, comprisingsaid drain terminal of said second field effect transistor; and a secondgate electrode, comprising said gate of said second field effecttransistor, said second doped gallium nitride superjunction layer beingoperable to suppress breakdown both through said second siliconsubstrate layer and between said second gate and second drainelectrodes.
 4. A circuit comprising: a first field effect transistorhaving a gate, a first drain-source terminal, and a second drain-sourceterminal, said first field effect transistor comprising one of ann-channel transistor and a p-channel transistor; and a second fieldeffect transistor having a gate, a first drain-source terminal, and asecond drain-source terminal, said second field effect transistor alsocomprising said one of an n-channel transistor and a p-channeltransistor; wherein: said second drain-source terminal of said firstfield effect transistor is coupled to said first drain-source terminalof said second field effect transistor; and said gate of said secondfield effect transistor is coupled to said first drain-source terminalof said second field effect transistor; further comprising: a thirdfield effect transistor having a gate, a first drain-source terminal,and a second drain-source terminal, said third field effect transistorcomprising said one of an n-channel transistor and a p-channeltransistor; a fourth field effect transistor having a gate, a firstdrain-source terminal, and a second drain-source terminal, said fourthfield effect transistor comprising said one of an n-channel transistorand a p-channel transistor; wherein: said second drain-source terminalof said third field effect transistor is coupled to said seconddrain-source terminal of said second field effect transistor; said gateof said third field effect transistor is coupled to said gate of saidsecond field effect transistor; said gate of said third field effecttransistor is coupled to said second drain-source terminal of said firstfield effect transistor; said gate of said fourth field effecttransistor is coupled to said first drain-source terminal of said fourthfield effect transistor; said second drain-source terminal of saidfourth field effect transistor is coupled to said first drain-sourceterminal of said third field effect transistor; and said firstdrain-source terminal of said first field effect transistor is coupledto said first drain-source terminal of said third field effecttransistor.
 5. The circuit of claim 4, wherein: said first field effecttransistor comprises a first high electron mobility transistorstructure, in turn comprising: a first doped gallium nitridesuperjunction layer comprising a first plurality of p/n junctions; afirst substrate layer; a first barrier layer adjoining said first dopedgallium nitride superjunction layer, said first doped gallium nitridesuperjunction layer being positioned between said first substrate layerand said first barrier layer; a first source electrode, comprising saidsource terminal of said first field effect transistor; a first drainelectrode, comprising said drain terminal of said first field effecttransistor; a first gate electrode, comprising said gate of said firstfield effect transistor; and a first passivation layer overlying saidfirst barrier layer, wherein an electric field set up by said firstdoped gallium nitride superjunction layer is vertical to an electricfield set up between said first gate electrode and said first drainelectrode upon application of a voltage to said first gate electrode;and said second field effect transistor comprises a second high electronmobility transistor structure, in turn comprising: a second dopedgallium nitride superjunction layer comprising a second plurality of p/njunctions; a second substrate layer; a second barrier layer adjoiningsaid second doped gallium nitride superjunction layer, said second dopedgallium nitride superjunction layer being positioned between said secondsubstrate layer and said second barrier layer; a second sourceelectrode, comprising said source terminal of said second field effecttransistor; a second drain electrode, comprising said drain terminal ofsaid second field effect transistor; a second gate electrode, comprisingsaid gate of said second field effect transistor; and a secondpassivation layer overlying said second barrier layer, wherein anelectric field set up by said second doped gallium nitride superjunctionlayer is vertical to an electric field set up between said second gateelectrode and said second drain electrode upon application of a voltageto said second gate electrode.
 6. A circuit comprising: a first fieldeffect transistor having a gate, a first drain-source terminal, and asecond drain-source terminal, said first field effect transistorcomprising one of an n-channel transistor and a p-channel transistor;and a second field effect transistor having a gate, a first drain-sourceterminal, and a second drain-source terminal, said second field effecttransistor also comprising said one of an n-channel transistor and ap-channel transistor; wherein: said second drain-source terminal of saidfirst field effect transistor is coupled to said first drain-sourceterminal of said second field effect transistor; and said gate of saidsecond field effect transistor is coupled to said first drain-sourceterminal of said second field effect transistor; further comprising: athird field effect transistor having a gate, a first drain-sourceterminal, and a second drain-source terminal, said third field effecttransistor comprising said one of an n-channel transistor and ap-channel transistor; and a fourth field effect transistor having agate, a first drain-source terminal, and a second drain-source terminal,said fourth field effect transistor comprising said one of an n-channeltransistor and a p-channel transistor; wherein: said second drain-sourceterminal of said third field effect transistor is coupled to said seconddrain-source terminal of said second field effect transistor; said gateof said third field effect transistor is coupled to said gate of saidsecond field effect transistor; said first drain-source terminal of saidfirst field effect transistor is coupled to said first drain-sourceterminal of said fourth field effect transistor; said gate of saidfourth field effect transistor is coupled to said first drain-sourceterminal of said fourth field effect transistor; and said seconddrain-source terminal of said fourth field effect transistor is coupledto said first drain-source terminal of said third field effecttransistor.
 7. A circuit comprising: a first field effect transistorhaving a gate, a first drain-source terminal, and a second drain-sourceterminal, said first field effect transistor comprising one of ann-channel transistor and a p-channel transistor; a second field effecttransistor having a gate, a first drain-source terminal, and a seconddrain-source terminal, said second field effect transistor alsocomprising said one of an n-channel transistor and a p-channeltransistor; a third field effect transistor having a gate, a firstdrain-source terminal, and a second drain-source terminal, said thirdfield effect transistor comprising said one of an n-channel transistorand a p-channel transistor; and a fourth field effect transistor havinga gate, a first drain-source terminal, and a second drain-sourceterminal, said fourth field effect transistor comprising said one of ann-channel transistor and a p-channel transistor; wherein: said gate ofsaid fourth field effect transistor is coupled to said firstdrain-source terminal of said fourth field effect transistor; saidsecond drain-source terminal of said fourth field effect transistor iscoupled to said first drain-source terminal of said third field effecttransistor; said gate of said fourth field effect transistor is coupledto said first drain-source terminal of said first field effecttransistor; said second drain-source terminal of said first field effecttransistor is coupled to said first drain-source terminal of said secondfield effect transistor; and said gate of said second field effecttransistor is coupled to said gate of said first field effecttransistor.
 8. The circuit of claim 7, wherein: said first drain-sourceterminal of said first transistor comprises a drain terminal; saidsecond drain-source terminal of said first transistor comprises a sourceterminal; said first drain-source terminal of said second transistorcomprises a drain terminal; and said second drain-source terminal ofsaid second transistor comprises a source terminal.
 9. The circuit ofclaim 8, wherein: said first field effect transistor comprises a firsthigh electron mobility transistor structure, in turn comprising: a firstdoped gallium nitride superjunction layer comprising a first pluralityof p/n junctions; a first substrate layer; a first barrier layeradjoining said first doped gallium nitride superjunction layer, saidfirst doped gallium nitride superjunction layer being positioned betweensaid first substrate layer and said first barrier layer; a first sourceelectrode, comprising said source terminal of said first field effecttransistor; a first drain electrode, comprising said drain terminal ofsaid first field effect transistor; a first gate electrode, comprisingsaid gate of said first field effect transistor; and a first passivationlayer overlying said first barrier layer, wherein an electric field setup by said first doped gallium nitride superjunction layer is verticalto an electric field set up between said first gate electrode and saidfirst drain electrode upon application of a voltage to said first gateelectrode; and said second field effect transistor comprises a secondhigh electron mobility transistor structure, in turn comprising: asecond doped gallium nitride superjunction layer comprising a secondplurality of p/n junctions; a second substrate layer; a second barrierlayer adjoining said second doped gallium nitride superjunction layer,said second doped gallium nitride superjunction layer being positionedbetween said second substrate layer and said second barrier layer; asecond source electrode, comprising said source terminal of said secondfield effect transistor; a second drain electrode, comprising said drainterminal of said second field effect transistor; a second gateelectrode, comprising said gate of said second field effect transistor;and a second passivation layer overlying said second barrier layer,wherein an electric field set up by said second doped gallium nitridesuperjunction layer is vertical to an electric field set up between saidsecond gate electrode and said second drain electrode upon applicationof a voltage to said second gate electrode.
 10. The circuit of claim 8,wherein: said first field effect transistor comprises a first highelectron mobility transistor structure, in turn comprising: a firstdoped gallium nitride superjunction layer having a thickness of lessthan ten microns and comprising a first plurality of p/n junctions, theentirety of the thickness of said first doped gallium nitridesuperjunction layer comprising a first superjunction structure; a firstsilicon substrate layer; a first aluminum gallium nitride barrier layeradjoining said first doped gallium nitride superjunction layer, saidfirst doped gallium nitride superjunction layer being positioned betweensaid first silicon substrate layer and said first aluminum galliumnitride barrier layer; a first source electrode, comprising said sourceterminal of said first field effect transistor; a first drain electrode,comprising said drain terminal of said first field effect transistor; afirst gate electrode, comprising said gate of said first field effecttransistor, said first doped gallium nitride superjunction layer beingoperable to suppress breakdown both through said first silicon substratelayer and between said first gate and first drain electrodes; and saidsecond field effect transistor comprises a second high electron mobilitytransistor structure, in turn comprising: a second doped gallium nitridesuperjunction layer having a thickness of less than ten microns andcomprising a second plurality of p/n junctions, the entirety of thethickness of said second doped gallium nitride superjunction layercomprising a second superjunction structure; a second silicon substratelayer; a second aluminum gallium nitride barrier layer adjoining saidsecond doped gallium nitride superjunction layer, said second dopedgallium nitride superjunction layer being positioned between said secondsubstrate layer and said second aluminum gallium nitride barrier layer;a second source electrode, comprising said source terminal of saidsecond field effect transistor; a second drain electrode, comprisingsaid drain terminal of said second field effect transistor; a secondgate electrode, comprising said gate of said second field effecttransistor, said second doped gallium nitride superjunction layer beingoperable to suppress breakdown both through said second siliconsubstrate layer and between said second gate and second drainelectrodes.
 11. The circuit of claim 1, wherein said first, second,third and fourth field effect transistors aremetal-insulator-semiconductor (MIS) field-effect transistors.
 12. Thecircuit of claim 11, wherein said MIS field-effect transistors arehigh-electron-mobility transistors (MIS-HEMT).
 13. The circuit of claim12, wherein said MIS-HEMTs comprise Si, SiC or GaN.
 14. The circuit ofclaim 13, wherein said GaN MIS-HEMTs include a GaN layer formed on asubstrate comprising of sapphire or zinc oxide.
 15. The circuit of claim1, wherein said gates of said first, second, third and fourth fieldeffect transistors are recessed.
 16. The circuit of claim 6, whereinsaid second drain-source terminal of said fourth field effect transistorcoupled to said first drain-source terminal of said third field effecttransistor sees a drain-to-gate voltage of V_(D)-V_(G)/2.
 17. Thecircuit of claim 6, wherein said gate of second field effect transistorhas a gate voltage of V_(G)/2.
 18. The circuit of claim 6, wherein adrain voltage is greater than a source voltage.
 19. The circuit of claim6, wherein a drain voltage is less than a source voltage.
 20. Thecircuit of claim 6, wherein said gate of the first field effecttransistor has a gate voltage of V_(G)<0.